Most of the following publications can be requested through Research gate (https://www.researchgate.net/profile/Giovanni_Capellini/?ev=hdr_xprf)  

  1.  M. Virgilio, M. Ortolani, M. Teich, S. Winnerl, M. Helm, D. Sabbagh, G. Capellini, and M. De Seta,“Combined Effect of Electron and Lattice Temperatures on the Long Intersubband Relaxation Times of Ge/SiGe Quantum Wells”. Physical Review B in press  (2014)

  2. F. Montalenti, M. Salvalaglio, A. Marzegalli, P. Zaumseil, G. Capellini, T. U. Schülli, M. A. Schubert, Y. Yamamoto, B. Tillack, and T. Schroeder, “Fully coherent growth of Ge on free-standing Si(001) nano-mesas”.Physical Review B 89, 014101 (2014)

  3. G. Capellini, C. Reich, S. Guha, Y. Yamamoto, M. Lisker, M. Virgilio, A. Ghrib, M. El Kurdi, P. Boucaud, B. Tillack, and T. Schroeder, “Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal oxide semiconductor process”.Optics Express 22, 399 (2014)

  4.  M. Virgilio, C. L. Manganelli, G. Grosso, T. Schroeder, and G. Capellini, “Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained Germanium layers”. Journal of Applied Physics 114, 243102 (2013).

  5.  G. Mattoni, W. M. Klesse,  G. Capellini, M.Y. Simmons, and G. Scappucci, “Phosphorus molecules on Ge(001): a playground for controlled n-doping of germanium at high densities”. ACS Nano 7, 11310 (2013).

  6. A. Novack, M. Gould, Y. Yang, Z.  Xuan, M. Streshinsky, Y. Liu, G. Capellini, A. Eu-Jin Lim, G.-Q. Lo, T. Baehr-Jones, and M. Hochberg, “Germanium photodetector with 60 GHz bandwidth using inductive gain peaking”. Optics Express 21, 28387 (2013)  

  7. A. Marzegalli, M. Brunetto,  F. Montalenti, G. Nicotra, M. Scuderi, C. Spinella, M. De Seta, and G. Capellini, “Understanding the onset of plastic relaxation in low temperature Ge growth on Si(001) substrate”. Physical Review B 88, 165418 (2013)

  8. D. J. Carter, O. Warschkow, J. D. Gale, G. Scappucci, W. M. Klesse, G. Capellini, A. L. Rohl, M. Y. Simmons, D. R. McKenzie, and N. A. Marks. "Electronic structure of phosphorus and arsenic d-doped germanium”.  Physical Review B  88, 115203 (2013)

  9. M. Virgilio, C. L. Manganelli, G. Grosso, G. Pizzi, and G. Capellini,     “Radiative recombination and optical gain spectra in biaxially strained n-type Germanium”. Physical Review B 87, 235313 (2013)

  10. W. M. Klesse, G. Scappucci, G. Capellini, J.-M. Hartmann, and M. Y. Simmons. “Atomic layer doping of strained Ge-On-Insulator thin films with high electron densities”. Applied Physics Letters 102, 151103 ( 2013)

  11.  G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons. “New avenues to an old material: controlled nanoscale doping of germanium”. Nanoscale 5, 2600 (2013)

  12.  G. Capellini, G. Kozlowski, Y. Yamamoto, M. Lisker, C. Wenger, G. Niu, P. Zaumseil, B. Tillack, A. Ghrib, M. de Kersauson, M. El Kurdi, P. Boucaud, and T. Schroeder. “Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach”.  ,Journal of Applied Physics 113, 013513 (2013)

  13. M. Virgilio, G. Grosso, G. Pizzi, M. De Seta, G. Capellini, and M. Ortolani. “Modeling Picosecond Electron Dynamics of Pump-Probe Intersubband Spectroscopy in n-type Ge/SiGe Quantum Well”. Physical Review B 86, 205317 (2012) 

  14. M. De Seta, G. Capellini, M. Ortolani, M. Virgilio, G. Grosso, G. Nicotra, and P. Zaumseil.  “Narrow intersubband transitions in n-type Ge/SiGe multi quantum wells: temperature control of the absorption energy in the terahertz range trough the depolarization shift”. Nanotechnology 23, 465708 (2012)

  15. G. Scappucci, W. M. Klesse, A. R. Hamilton, G.Capellini,  D. L. Jaeger, M. R. Bischof, R. F. Reidy, B. P. Gorman, and M. Y. Simmons. "Stacking of 2D Electron Gases in Ge Probed at the Atomic Level and Its Correlation to Low-Temperature Magnetotransport”.  Nano Letters 11, 4953 (2012)

  16. G. Scappucci, O. Warschkow, G.Capellini, W. M. Klesse, D. R. McKenzie, and M. Y. Simmons. “N-type doping of germanium from phosphine: early stages resolved at the atomic level”.Physical Review Letters 109, 076101 (2012)

  17. D. Spirito, L. Di Gaspare, F. Evangelisti, A. Di Gaspare, E. Giovine, and A. Notargiacomo, "Weak antilocalization and spin-orbit interaction in a two-dimensional electron gas", Physical Review B 85, 235314 (2012)

  18. V. S. Kopp, V.M. Kaganer, G.Capellini, M. De Seta, and P. Zaumseil “X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates”. Physical Review B 85, 245311 (2012)

  19. G.Capellini,  M. De Seta, P. Zaumseil, G. Kozlowski, and T. Schroeder.“High temperature x-ray diffraction measurements on Ge/Si(001) heterostructures: a study on the residual tensile strain”.  Journal of Applied Physics 111, 073518 (2012).

  20. G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons. “Phosphorus atomic layer doping of germanium by stacking of multiple δ-layers”. Nanotechnology 22, 375203 (2011)

  21. M. Ortolani, D. Stehr, M. Wagner, M. Helm, G. Pizzi, M. Virgilio, G. Grosso, G. Capellini, and M.De Seta. “Long Intersubband Relaxation Times in n-type Germanium Quantum Wells”. Applied Physics Letters 99, 201101 (2011)  

  22. G. Scappucci,  G. Capellini, B. Johnston, W. M. Klesse, J. Miwa, and M. Y. Simmons. "A complete fabrication route for atomic-scale donor-based devices in single-crystal germanium”. Nano Letters 11, 2272 (2011).

  23. A. Notargiacomo, R. Bagni, E. Giovine, V. Foglietti, S. Carta, M. Pea ,L. Di Gaspare, G. Capellini, and F. Evangelisti.“ Fabrication of air-bridge Schottky diodes on germanium for high speed IR detectors”.  Microelectronic Engineering,88, 2714 (2011)

  24. W.  M. Klesse, G. Scappucci, G. Capellini, and M. Y. Simmons.  “Preparation of the Ge(001) surface towards fabrication of atomic-scale germanium devices”. Nanotechnology 22, 145604 (2011).

  25. D. Spirito, L. Di Gaspare, G. Frucci, F. Evangelisti, A. Di Gaspare, A. Notargiacomo, E. Giovine, S. Roddaro, and F. Beltram, "Magnetotransport investigation of conducting channels and spin splitting in high-density AlGaN/AlN/GaN two-dimensional electron gas", Physical Review B 83, 155318 (2011).

  26. G. Scappucci, G. Capellini, W. M. Klesse, and M. Y. Simmons.“Dual-temperature encapsulation of phosphorus in germanium δ-layers towards ultra shallow junctions.”.  Journal of Crystal Growth, 316, 81 (2011)  

  27. D. Spirito, G. Frucci, A. Di Gaspare, L. Di Gaspare, E. Giovine, A. Notargiacomo, S. Roddaro, F. Beltram, and F. Evangelisti, "Quantum transport in low-dimensional AlGaN/GaN systems", Journal of  Nanoparticle Research (2010)

  28. A. A. Tseng, A. Notargiacomo, T. P. Chen, and Y. C. Liu. "Profile Uniformity of Overlapped Oxide Dots Induced by Atomic Force Microscopy". Journal of Nanoscience and  Nanotechnology 10, 4390 (2010)  

  29. Y. Busby, M. De Seta, G. Capellini, F. Evangelisti, M. Ortolani, M. Virgilio, G. Grosso, G. Pizzi, P. Calvani , S. Lupi, M. Nardone, G. Nicotra, and C. Spinella.“Near and far-  infrared absorption and electronic structure of Ge-SiGe multiple quantum wells”. Physical Review B 82, 205317 (2010).  

  30. G. Frucci, L. Di Gaspare, F. Evangelisti, E. Giovine, A. Notargiacomo, V. Piazza and F. Beltram. "Conductance and valley splitting in etched Si/SiGe one-dimensional nanostructures". Physical  Review B 81, 195311 (2010).

  31. R. Torchio, C. Meneghini, S. Mobilio, G. Capellini, A. Garcìa Prieto, J. Alonso, M. L. Fdez-Gubieda,V. Turco Liveri, A. Longo, A. M. Ruggirello, and T. Neisius,“Microstructure and magnetic properties of  colloidal cobalt nano-clusters”.  Journal of Magnetism and Magnetic Materials, 322, 3565 (2010).

  32. G. Capellini, M. De Seta, Y. Busby,  M. Pea, F. Evangelisti, G. Nicotra, C. Spinella, M. Nardone, and C. Ferrari,“Strain relaxation in high Ge content SiGe layers deposited on Si”.  Journal of Applied Physics, 107, 063504 (2010)

  33. A. Capobianchi, S Laureti, D Fiorani, S Foglia and E Palange, "Direct synthesis of L10 FePt nanoparticles within carbon nanotubes by wet chemical procedure", Journal of  Physics D: Applied Physics 43, 474013 (2010)

  34. G. Scappucci, G. Capellini, and M. Y. Simmons, “Influence of encapsulation temperature on Ge:P δ-doped layers”. Physical Review B 80, 233202 (2009)

  35. G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons, “Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy”. Nanotechnology 20, 495302 (2009)

  36. M. De Seta, G. Capellini, Y. Busby,  F. Evangelisti, M. Ortolani, M. Virgilio, G. Grosso, G. Pizzi, A. Nucara, and S. Lupi, “Conduction-band intersubband transitions in Ge/SiGe quantum wells” .Applied Physics Letters 95, 051918 (2009).

  37. G. Capellini, G. Ciasca, M. De Seta, A. Notargiacomo, F. Evangelisti, and M. Nardone, "Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on insulator substrates". Journal of Applied Physics  105, 093525 (2009)

  38. G. Scappucci, G. Capellini, W. C. T. Lee, and M. Y. Simmons, “Ultra-dense phosphorus in germanium delta-doped layers”. Applied Physics Letters 94, 162106 (2009).  

  39. A. A. Tseng, J. I Shirakashi, S. Nishimura, K. Miyashita, and A. Notargiacomo." Scratching properties of nickel-iron thin film and silicon using atomic force microscopy". Journal of Applied Physics 106, (2009)

  40. G. Ciasca, M. De Seta, G. Capellini, F. Evangelisti, M. Ortolani, M. Virgilio, G. Grosso, A. Nucara, and P. Calvani,“Terahertz intersubband absorption and conduction band alignment in n-type Si/SiGe multi-quantum wells”.  Physical Review B 79, 085302 (2009).

  41. A. Capobianchi, M. Colapietro , D. Fiorani, S. Foglia, P. Imperatori, S. Laureti, and E. Palange. " General Strategy for Direct Synthesis of L10 Nanoparticle Alloys from Layered Precursor: The Case of FePt", Chemistry of Materials 21, 2007 (2009)

  42. M. De Seta, G. Capellini, and F. Evangelisti.“ Island and wetting-layer intermixing in the Ge/Si(001) system upon capping”, Superlattices and Microstructures 46, 328 (2009).

  43. A. Notargiacomo, L. Di Gaspare and F. Evangelisti,  “Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures”, Superlattices and Microstructures 46, 149 (2009)

  44. S. Foglia, A. Notargiacomo, A. Capobianchi, A.M. Testa, D. Fiorani, L. Arrizza and C. Veroli,  “Novel ultrasonic-assisted alignment of L10 FePt nanoparticles”, Superlattices and Microstructures 46, 121 (2009)