The fabrication and study of the morphological, structural and electronic transport properties of 2DEG in Si/SiGe heterostructures grown by UHV-CVD technique. We demonstrated the growth of high quality 2DEG in modulation doped Si/SiGe heterostructures both on standard silicon or silicon-on-insulator (SOI) substrates by morphological and structural studies of the defect formation in SiGe virtual substrates and an accurate optimization of the heterostructures layers growth parameters, The transport properties were evaluated by Hall effect measurements. The measured electron mobilities of the 2DEG’s on grown on Si substrates are comparable with the values reported in literature for similar materials (m~1x10⁵cm²/Vs at T=4.2K), while the measured electron mobilities at both room and low temperature showed that the 2DEG’s grown on SOI substrates were state of the art (m~8x10⁴ cm²/Vs at T=4.2K, m~2800 cm²/Vs at room temperature).

 In the quest of the most favorable configuration for single electron devices integrable in to standard Si technology, we investigated the electrical transport properties of nanowire-based devices fabricated on modulation-doped Si/SiGe 2DEG . We study gated nanowires of different sizes and shapes fabricated by electron beam lithography and reactive ion etching. By adopting a bended-wire geometry we were able to induce robust tunnel junctions along the nanowire direction and we first reported a conclusive evidence of single electron transistor behavior in Si/SiGe mesoscopic devices above liquid helium temperatures.

A recent subject of investigation, are  the magnetotransport properties of etch-defined ballistic cavities fabricated on Si/SiGe modulation doped 2DEG. We fabricated ballistic Si/SiGe cavities by the lateral displacement of a nanowire segment and by means of low temperature magnetotransport measurements we first reported ballistic effect evidences such as internal electron magnetic focusing and quantum interference effects as weak localization in ballistic Si/SiGe mesoscopic devices. These studies demonstrates the feasibility of coherent devices based on Si/SiGe heterostructures architecture, integrable in to standard Si technology.